Infineon BTS132E3045ANTMA1

工厂交货时间

1 Week

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

表面安装

NO

供应商器件包装

PG-TO220-3-5

终端数量

3

晶体管元件材料

SILICON

Continuous Drain Current Id

24

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

厂商

Infineon Technologies

Power Dissipation (Max)

75W

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

BTS132E3045ANTMA1

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.82

Drain Current-Max (ID)

24 A

操作温度

-55°C ~ 150°C (TJ)

系列

TEMPFET®

ECCN 代码

EAR99

技术

MOSFET (Metal Oxide)

端子位置

SINGLE

终端形式

THROUGH-HOLE

JESD-30代码

R-PSFM-T3

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

功率耗散

75

箱体转运

DRAIN

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

65mOhm @ 12A, 4.5V

输入电容(Ciss)(Max)@Vds

1400 pF @ 25 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

0.065 Ω

脉冲漏极电流-最大值(IDM)

96 A

DS 击穿电压-最小值

60 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

达到SVHC

unknown