Infineon BUZ73AHXKSA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3-1

Continuous Drain Current Id

5.5

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

40W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

操作温度

-55°C ~ 150°C (TJ)

系列

SIPMOS®

技术

MOSFET (Metal Oxide)

功率耗散

40

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 4.5A, 10V

输入电容(Ciss)(Max)@Vds

530 pF @ 25 V

漏源电压 (Vdss)

200 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-