Infineon DF11MR12W1M1PB11BPSA1

安装类型

底座安装

包装/外壳

Module

供应商器件包装

AG-EASY1B-2

Vr - Reverse Voltage

1200 V

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

5.55 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

底座安装

Part # Aliases

DF11MR12W1M1P_B11 SP005403179

Manufacturer

Infineon

Brand

Infineon Technologies

Tradename

EasyPACK ~ CoolSiC ~ PressFIT

Package

Tray

Base Product Number

DF11MR12

Current - Continuous Drain (Id) @ 25℃

50A (Tj)

厂商

Infineon Technologies

Product Status

Obsolete

系列

Discrete Module

包装

Tray

操作温度

-40°C ~ 150°C (TJ)

类型

SiC Power MOSFET

子类别

Discrete Semiconductor Modules

技术

Si

功率耗散

20

功率 - 最大

20mW

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

22.5mOhm @ 50A, 15V

不同 Id 时 Vgs(th)（最大值）

5.55V @ 20mA

输入电容(Ciss)(Max)@Vds

3680pF @ 800V

门极电荷(Qg)(最大)@Vgs

124nC @ 15V

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

信道型

Dual N

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

Vf-正向电压

4.6 V

产品类别

Discrete Semiconductor Modules