Infineon IGLR60R260D1XUMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TSON-8-7

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

10.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

厂商

Infineon Technologies

Power Dissipation (Max)

52W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.6V @ 690µA

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

52 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V

Minimum Operating Temperature

- 40 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

1.5 nC

Rds On - Drain-Source Resistance

260 mOhms

Id - Continuous Drain Current

10.4 A

操作温度

-40°C ~ 150°C (TJ)

系列

CoolGaN™

技术

GaNFET (Gallium Nitride)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

-

输入电容(Ciss)(Max)@Vds

110 pF @ 400 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

-10V

场效应管特性

-