Infineon IPA60R299CPXK

包装/外壳

TO-220FP-3

安装类型

通孔

供应商器件包装

PG-TO220-3-31

Continuous Drain Current Id

11

Pd - Power Dissipation

33 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000096438 IPA60R299CPXKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

29 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

270 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

11 A

厂商

Infineon Technologies

Power Dissipation (Max)

33W (Tc)

Product Status

活跃

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 440µA

系列

CoolMOS CE

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

299mOhm @ 6.6A, 10V

输入电容(Ciss)(Max)@Vds

1100 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

29 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET

高度

16.15 mm

长度

10.65 mm

宽度

4.85 mm