Infineon IPB034N06N3GATMA2

安装类型

表面贴装

包装/外壳

TO-263-7, D²Pak (6 Leads + Tab)

供应商器件包装

PG-TO263-7-3

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

167W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 93µA

Package

Tape & Reel (TR)

Factory Pack QuantityFactory Pack Quantity

1000

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

操作温度

-55°C ~ 175°C (TJ)

系列

OptiMOS™3

包装

切割胶带

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.4mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

11000 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

130 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-

产品类别

Infineon