Infineon IPD023N04NF2SATMA1

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

PG-TO252-3

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.4V @ 81µA

Product Status

活跃

Power Dissipation (Max)

3W (Ta), 150W (Tc)

厂商

Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25℃

27A (Ta), 143A (Tc)

Base Product Number

IPD023

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

68 nC

Rds On - Drain-Source Resistance

2.3 mOhms

Id - Continuous Drain Current

143 A

Vgs th - Gate-Source Threshold Voltage

2.2 V

Vds - Drain-Source Breakdown Voltage

40 V

系列

StrongIRFET™2

操作温度

-55°C ~ 175°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.3mOhm @ 70A, 10V

输入电容(Ciss)(Max)@Vds

4800 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

102 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-