Infineon IPI60R385CP

包装/外壳

TO-262-3

安装类型

通孔

表面安装

NO

引脚数

3

供应商器件包装

PG-TO262-3-1

终端数量

3

晶体管元件材料

SILICON

Continuous Drain Current Id

9

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

83 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.084199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000103250 IPI6R385CPXK IPI60R385CPXKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

17 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

385 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

9 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

83W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 340µA

Package Description

GREEN, PLASTIC, TO-262, 3 PIN

Package Style

IN-LINE

Moisture Sensitivity Levels

未说明

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Drain Current-Max (ID)

9 A

Part Package Code

TO-262AA

Risk Rank

5.38

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Part Life Cycle Code

活跃

Number of Elements

1

Package Shape

RECTANGULAR

Manufacturer Part Number

IPI60R385CP

Rohs Code

有

系列

CoolMOS CP

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

JESD-609代码

e3

无铅代码

有

端子表面处理

哑光锡

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

260

JESD-30代码

R-PSIP-T3

资历状况

COMMERCIAL

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

83

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

385mOhm @ 5.2A, 10V

输入电容(Ciss)(Max)@Vds

790 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

22 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-262AA

漏极-源极导通最大电阻

0.385 Ω

脉冲漏极电流-最大值(IDM)

27 A

DS 击穿电压-最小值

600 V

信道型

N

雪崩能量等级（Eas）

227 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

产品类别

MOSFET

宽度

4.5 mm

高度

9.45 mm

长度

10.2 mm

达到SVHC

unknown