Infineon IPP020N06N

包装/外壳

TO-220-3

表面安装

NO

引脚数

3

终端数量

3

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

24 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Forward Transconductance - Min

100 S

Channel Mode

Enhancement

Part # Aliases

IPP2N6NXK SP000917406 IPP020N06NAKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

124 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

1.8 mOhms

Typical Turn-Off Delay Time

51 ns

Id - Continuous Drain Current

120 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPP020N06N

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Samacsys Description

Infineon IPP020N06N N-channel MOSFET Transistor, 120 A, Minimum of 60 V, 3-Pin TO-220

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

2.25

Part Package Code

TO-220AB

Drain Current-Max (ID)

29 A

系列

OptiMOS 5

包装

Tube

JESD-609代码

e3

ECCN 代码

EAR99

端子表面处理

Tin (Sn)

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

JESD-30代码

R-PSFM-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

晶体管应用

SWITCHING

上升时间

45 ns

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

0.002 Ω

脉冲漏极电流-最大值(IDM)

480 A

DS 击穿电压-最小值

60 V

雪崩能量等级（Eas）

420 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

产品类别

MOSFET

宽度

4.4 mm

高度

15.65 mm

长度

10 mm

达到SVHC

compliant