Infineon IPP05CN10NGXK
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IPP05CN10NGXK详情
Infineon IPP05CN10NGXK重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
引脚数
3
供应商器件包装
PG-TO220-3-1
RoHS
Non-Compliant
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Infineon Technologies
Power Dissipation (Max)
300W (Tc)
Product Status
Obsolete
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250µA
操作温度
-55°C ~ 175°C (TJ)
系列
OptiMOS™
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5.4mOhm @ 100A, 10V
输入电容(Ciss)(Max)@Vds
12000 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
181 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
场效应管特性
-
IPP05CN10NGXK拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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