Infineon IPP60R190P6

工厂交货时间

1 Week

包装/外壳

TO-220-3

表面安装

NO

引脚数

3 +Tab

终端数量

3

晶体管元件材料

SILICON

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

底座安装

Manufacturer

Vishay

Brand

Vishay / Dale

RoHS

Details

Continuous Drain Current

20.2(A)

Drain-Source On-Volt

600(V)

Operating Temperature Classification

Military

Package Type

TO-220

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

151 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Part # Aliases

SP001017066 IPP60R190P6XKSA1

Qg - Gate Charge

37 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

190 mOhms

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

20.2 A

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IPP60R190P6

Package Shape

RECTANGULAR

Part Life Cycle Code

活跃

Samacsys Description

MOSFET Metal Oxide Semi conductor Field Effect Transistor

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

1.63

Drain Current-Max (ID)

20.2 A

系列

CSPR

包装

Bulk

JESD-609代码

e3

无铅代码

有

ECCN 代码

EAR99

类型

功率MOSFET

电阻

390 Ohms

端子表面处理

Matte Tin (Sn)

子类别

Resistors

额定功率

6 kOhms

技术

Wirewound

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

终端样式

导线引线

JESD-30代码

R-PSFM-T3

极性

N

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

151(W)

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

8 ns

极性/通道类型

N-CHANNEL

产品类别

绕线电阻

晶体管类型

1 N-Channel

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

0.19 Ω

脉冲漏极电流-最大值(IDM)

57 A

DS 击穿电压-最小值

600 V

雪崩能量等级（Eas）

419 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

产品类别

Wirewound Resistors - Chassis Mount

宽度

4.4 mm

高度

15.65 mm

长度

10 mm

达到SVHC

compliant