Infineon IPT012N08NF2SATMA1

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

PG-HSOF-8

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

39A (Ta), 351A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Product Status

活跃

Factory Pack QuantityFactory Pack Quantity

1800

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

170 nC

Rds On - Drain-Source Resistance

1.23 mOhms

Id - Continuous Drain Current

351 A

操作温度

-55°C ~ 175°C (TJ)

系列

StrongIRFET™ 2

包装

切割胶带

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.23mOhm @ 150A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 267µA

输入电容(Ciss)(Max)@Vds

12000 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

255 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

场效应管特性

-

产品类别

Infineon