Infineon IPU50R950CE

包装/外壳

TO-251-3

安装类型

通孔

引脚数

3 +Tab

供应商器件包装

PG-TO251-3

Continuous Drain Current Id

6.6

Continuous Drain Current

4.3(A)

Drain-Source On-Volt

500(V)

Operating Temperature Classification

Military

Package Type

TO-251

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

53 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

通孔

Part # Aliases

SP001022956 IPU50R950CEBKMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

10.5 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

860 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

6.6 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

厂商

Infineon Technologies

Power Dissipation (Max)

53W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 100µA

包装

Rail/Tube

系列

CoolMOS CE

操作温度

-55°C ~ 150°C (TJ)

类型

功率MOSFET

子类别

MOSFETs

技术

Si

极性

N

配置

Single

通道数量

1 Channel

功率耗散

53

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

950mOhm @ 1.2A, 13V

输入电容(Ciss)(Max)@Vds

231 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

10.5 nC @ 10 V

上升时间

4.9 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET

宽度

2.38 mm

高度

6.22 mm

长度

6.73 mm