Infineon IPU60R1K4C6

包装/外壳

TO-251-3

安装类型

通孔

供应商器件包装

PG-TO-251-3-341

Continuous Drain Current Id

3.2

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

28.4 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011993 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000931530 IPU60R1K4C6BKMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

9.4 nC

Rds On - Drain-Source Resistance

1.26 Ohms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

3.2 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

3.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 90µA

Product Status

活跃

Power Dissipation (Max)

28.4W (Tc)

系列

XPU60R1

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.4Ohm @ 1.1A, 10V

输入电容(Ciss)(Max)@Vds

200 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

9.4 nC @ 10 V

上升时间

7 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET

宽度

2.38 mm

高度

6.22 mm

长度

6.73 mm