IPW50R280CE详情
Infineon IPW50R280CE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
PG-TO247-3-41
Continuous Drain Current Id
18.1
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
厂商
Infineon Technologies
Power Dissipation (Max)
119W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.5V @ 350µA
操作温度
-55°C ~ 150°C (TJ)
系列
CoolMOS™
技术
MOSFET (Metal Oxide)
功率耗散
119
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
280mOhm @ 4.2A, 13V
输入电容(Ciss)(Max)@Vds
773 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
32.6 nC @ 10 V
漏源电压 (Vdss)
500 V
Vgs(最大值)
±20V
信道型
N通道
场效应管特性
-
IPW50R280CE拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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