Infineon IPW60R280C6

包装/外壳

Axial

安装类型

通孔

供应商器件包装

Axial

Continuous Drain Current Id

13.8

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

13.8A (Tc)

厂商

Infineon Technologies

Power Dissipation (Max)

104W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 430µA

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

104 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPW6R28C6XK SP000645032 IPW60R280C6FKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

43 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

250 mOhms

RoHS

Details

Typical Turn-Off Delay Time

100 ns

Id - Continuous Drain Current

13.8 A

操作温度

-65°C ~ 350°C

系列

CW

包装

Bulk

尺寸/尺寸

0.188 Dia x 0.562 L (4.78mm x 14.27mm)

容差

±5%

零件状态

活跃

终止次数

2

温度系数

±30ppm/°C

电阻

12 kOhms

组成

Wirewound

功率(瓦特)

3.75W

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

失败率

--

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

280mOhm @ 6.5A, 10V

输入电容(Ciss)(Max)@Vds

950 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

43 nC @ 10 V

上升时间

11 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

特征

Moisture Resistant, Pulse Withstanding

产品类别

MOSFET

座位高度(最大)

--

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm