Infineon IPW65R190C7

工厂交货时间

1 Week

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

PG-TO247-3

Factory Pack QuantityFactory Pack Quantity

5000

Manufacturer

Micro Commercial Components (MCC)

Brand

Micro Commercial Components (MCC)

RoHS

Details

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

72 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP001080142 IPW65R190C7XKSA1

Qg - Gate Charge

23 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

168 mOhms

Typical Turn-Off Delay Time

54 ns

Id - Continuous Drain Current

13 A

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

72W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 290µA

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPW65R190C7

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

2.22

包装

切割胶带

系列

CoolMOS C7

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

190mOhm @ 5.7A, 10V

输入电容(Ciss)(Max)@Vds

1150 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 10 V

上升时间

11 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MCC

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm

达到SVHC

compliant