Infineon IRF7821TRPBFXTMA1

包装/外壳

SO-8

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

2.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

9.3 nC

Rds On - Drain-Source Resistance

9.1 mOhms

Id - Continuous Drain Current

13.6 A

技术

Si

通道数量

1 Channel