JANSR2N7523U2详情
Infineon JANSR2N7523U2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
RoHS
Non-Compliant
Package Description
SMALL OUTLINE, R-CDSO-N3
Package Style
小概要
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Operating Temperature-Min
-55 °C
Operating Temperature-Max
150 °C
Manufacturer Part Number
JANSR2N7523U2
Turn-on Time-Max (ton)
210 ns
Package Shape
RECTANGULAR
Manufacturer
Infineon Technologies AG
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Turn-off Time-Max (toff)
180 ns
Risk Rank
5.72
Drain Current-Max (ID)
56 A
附加功能
HIGH RELIABILITY
端子位置
DUAL
终端形式
无铅
参考标准
MIL-19500; RH - 100K Rad(Si)
JESD-30代码
R-CDSO-N3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
最大漏极电流 (Abs) (ID)
56 A
漏极-源极导通最大电阻
0.013 Ω
脉冲漏极电流-最大值(IDM)
224 A
DS 击穿电压-最小值
30 V
雪崩能量等级(Eas)
1116 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
250 W
达到SVHC
compliant
无铅
含铅
JANSR2N7523U2拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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