Infineon SP000929186

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

360 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

1.5 nC

Rds On - Drain-Source Resistance

5.8 Ohms

Id - Continuous Drain Current

170 mA

技术

Si

通道数量

1 Channel