Infineon SPA07N65C3

包装/外壳

TO-220FP-3

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

3.9 V

Pd - Power Dissipation

32 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000216305 SPA7N65C3XK SPA07N65C3XKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

21 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

600 mOhms

RoHS

Details

Typical Turn-Off Delay Time

60 ns

Id - Continuous Drain Current

7.3 A

系列

CoolMOS C3

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

3.5 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.85 mm

高度

16.15 mm

长度

10.65 mm