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价格梯度
内地含税价
1
¥20.86987
10
¥19.688551
100
¥18.574108
500
¥17.522742
1000
¥16.530891
Infineon SPB160N04S2-03
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- 对比
SPB160N04S2-03
1211-SPB160N04S2-03
晶体管 - FET,MOSFET - 单个
TO-263-7, D²Pak (6 Leads + Tab)
大陆
立即发货

Power Field-Effect Transistor, 160A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263, 7 PIN
--最小包装量--
¥
总价: ¥
SPB160N04S2-03详情
Infineon SPB160N04S2-03重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-7, D²Pak (6 Leads + Tab)
供应商器件包装
PG-TO263-7-3
Continuous Drain Current Id
160
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Infineon Technologies
Power Dissipation (Max)
300W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250µA
操作温度
-55°C ~ 175°C (TJ)
系列
OptiMOS®
技术
MOSFET (Metal Oxide)
功率耗散
300
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.9mOhm @ 80A, 10V
输入电容(Ciss)(Max)@Vds
7320 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
170 nC @ 10 V
漏源电压 (Vdss)
40 V
Vgs(最大值)
±20V
信道型
N
场效应管特性
-
SPB160N04S2-03拓展信息
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