Infineon SPD03N60S5XT
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SPD03N60S5XT
1211-SPD03N60S5XT
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
1最小包装量--
SPD03N60S5XT详情
Infineon SPD03N60S5XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
PG-TO252-3-313
Continuous Drain Current Id
3.2
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Infineon Technologies
Power Dissipation (Max)
38W (Tc)
Product Status
活跃
操作温度
-55°C ~ 150°C (TJ)
系列
CoolMOS™
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.4Ohm @ 2A, 10V
不同 Id 时 Vgs(th)(最大值)
5.5V @ 135µA
输入电容(Ciss)(Max)@Vds
420 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
16 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
信道型
N
场效应管特性
-
SPD03N60S5XT拓展信息
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