Infineon SPD50N03S2-07G

包装/外壳

TO-252-3

安装类型

表面贴装

供应商器件包装

PG-TO252-3-11

Factory Pack QuantityFactory Pack Quantity

2500

Channel Mode

Enhancement

Brand

Infineon Technologies

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

136 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Part # Aliases

SP000443920 SPD50N03S207GXT SPD50N03S207GBTMA1

Manufacturer

Infineon

Qg - Gate Charge

35 nC

Tradename

OptiMOS

Rds On - Drain-Source Resistance

7.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

27 ns

Id - Continuous Drain Current

50 A

Package

Bulk

厂商

Infineon Technologies

Power Dissipation (Max)

136W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 85µA

包装

MouseReel

操作温度

-55°C ~ 175°C (TJ)

系列

OptiMOS®

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.3mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

2170 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

46.5 nC @ 10 V

上升时间

36 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET

宽度

6.22 mm

高度

2.3 mm

长度

6.5 mm