Infineon SPI07N60S5
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SPI07N60S5
1211-SPI07N60S5
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I²Pak, TO-262AA
大陆
立即发货

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
1最小包装量--
SPI07N60S5详情
Infineon SPI07N60S5重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件包装
PG-TO262-3-1
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Infineon Technologies
Power Dissipation (Max)
83W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5.5V @ 350µA
操作温度
-55°C ~ 150°C (TJ)
系列
CoolMOS™
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600mOhm @ 4.6A, 10V
输入电容(Ciss)(Max)@Vds
970 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
35 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
场效应管特性
-
SPI07N60S5拓展信息
Infineon Technologies
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Infineon Technologies
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