SPI07N65C3详情
Infineon SPI07N65C3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件包装
PG-TO262-3-1
Package
Bulk
厂商
PEI-Genesis
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
83W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.9V @ 350µA
系列
*
操作温度
-55°C ~ 150°C (TJ)
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600mOhm @ 4.6A, 10V
输入电容(Ciss)(Max)@Vds
790 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
27 nC @ 10 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
±20V
场效应管特性
-
SPI07N65C3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。