Infineon SPI08N50C3

安装类型

通孔

包装/外壳

TO-262-3 Long Leads, I²Pak, TO-262AA

供应商器件包装

PG-TO262-3-1

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

83W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.9V @ 350µA

操作温度

-55°C ~ 150°C (TJ)

系列

CoolMOS™

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 4.6A, 10V

输入电容(Ciss)(Max)@Vds

750 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

32 nC @ 10 V

漏源电压 (Vdss)

560 V

Vgs（最大值）

±20V

场效应管特性

-