SPP02N60C3详情
Infineon SPP02N60C3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
3-UFDFN
供应商器件包装
X1-DFN1006-3
Package
Bulk
Base Product Number
DMP2900
Current - Continuous Drain (Id) @ 25℃
990mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
厂商
Diodes Incorporated
Power Dissipation (Max)
550mW (Ta)
Product Status
活跃
Continuous Drain Current Id
1.8
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
MOSFET (Metal Oxide)
功率耗散
25
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
750mOhm @ 430mA, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250µA
输入电容(Ciss)(Max)@Vds
49 pF @ 16 V
门极电荷(Qg)(最大)@Vgs
0.7 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±6V
信道型
N
场效应管特性
-
SPP02N60C3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。