Infineon SPP11N80C3XK

包装/外壳

TO-220-3

Continuous Drain Current Id

11

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

156 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000683158 SPP11N80C3 SPP11N80C3XKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

85 nC

Rds On - Drain-Source Resistance

390 mOhms

RoHS

Details

Typical Turn-Off Delay Time

72 ns

Id - Continuous Drain Current

11 A

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

15 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

产品类别

MOSFET

宽度

4.4 mm

高度

15.65 mm

长度

10 mm