SPW11N60C3详情
Infineon SPW11N60C3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
PG-TO247-3-21
Continuous Drain Current Id
11
Package
Bulk
Current - Continuous Drain (Id) @ 25℃
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Infineon Technologies
Power Dissipation (Max)
125W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.9V @ 500µA
系列
*
操作温度
-55°C ~ 150°C (TJ)
零件状态
活跃
技术
MOSFET (Metal Oxide)
功率耗散
125
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
380mOhm @ 7A, 10V
输入电容(Ciss)(Max)@Vds
1200 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
60 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
信道型
N
场效应管特性
-
SPW11N60C3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。