Infineon T2001N34TOF

底架

表面贴装

包装/外壳

T-12026K

RoHS

Compliant

Rated Repetitive Off-State Voltage VDRM

3400 V

Gate Trigger Voltage - Vgt

2.5 V

Gate Trigger Current - Igt

350 mA

Maximum Operating Temperature

+ 125 C

Minimum Operating Temperature

- 40 C

Holding Current Ih Max

350 mA

Factory Pack QuantityFactory Pack Quantity

1

Part # Aliases

SP000091273 T2001N34TOFXPSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Off-State Leakage Current @ VDRM IDRM

400 mA

Non Repetitive On-State Current

44000 A

包装

Tray

容差

10 %

最高工作温度

125 °C

最小工作温度

-55 °C

电容量

100 pF

子类别

Thyristors

技术

Si

深度

1.25 mm

额定电流

2.84 A

电路型态

PCT

产品类别

可控硅模块

产品类别

可控硅模块

长度

2 mm