Infineon Technologies AIMBG120R080M1XTMA1

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

PG-TO263-7-12

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

30A

Drive Voltage (Max Rds On, Min Rds On)

-

Power Dissipation (Max)

-

Factory Pack QuantityFactory Pack Quantity

1000

Part # Aliases

AIMBG120R080M1 SP005411515

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

714 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Rds On - Drain-Source Resistance

80 mOhms

Id - Continuous Drain Current

27 A

操作温度

-55°C ~ 175°C

包装

Reel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

-

Rds On(Max)@Id,Vgs

-

不同 Id 时 Vgs(th)（最大值）

-

漏源电压 (Vdss)

1200 V

Vgs（最大值）

-

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET