Infineon Technologies AIMW120R045M1XKSA1

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

PG-TO247-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

52A (Tc)

Power Dissipation (Max)

228W (Tc)

Base Product Number

AIMW120

Continuous Drain Current Id

52

Continuous Drain Current

52(A)

Drain-Source On-Volt

1200(V)

Operating Temperature Classification

汽车

Package Type

TO-247

Operating Temp Range

-40C to 175C

Gate-Source Voltage (Max)

20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

Number of Elements per Chip

1

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

5.7 V

Pd - Power Dissipation

228 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 7 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Forward Transconductance - Min

11.1 S

Part # Aliases

AIMW120R045M1 SP002472666

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

57 nC

Tradename

CoolSiC

Rds On - Drain-Source Resistance

59 mOhms

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

52 A

操作温度

-40°C ~ 175°C (TJ)

包装

Rail/Tube

类型

功率MOSFET

子类别

MOSFETs

引脚数量

3 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

228

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

59mOhm @ 20A, 15V

不同 Id 时 Vgs(th)（最大值）

5.7V @ 10mA

输入电容(Ciss)(Max)@Vds

2130 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

57 nC @ 15 V

上升时间

32 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+20V, -7V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET