Infineon Technologies AUIRLR3636TRL

工厂交货时间

16 Weeks

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

表面安装

YES

引脚数

2 +Tab

供应商器件包装

D-Pak

终端数量

2

晶体管元件材料

SILICON

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

不用于新设计

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 100μA

Power Dissipation (Max)

143W (Tc)

Base Product Number

AUIRLR3636

Continuous Drain Current Id

99

Continuous Drain Current

99(A)

Drain-Source On-Volt

60(V)

Operating Temperature Classification

Military

Package Type

DPAK

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

±16(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

-

Qualification

AEC-Q101

Pd - Power Dissipation

143 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

AUIRLR3636TRL SP001520624

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

33 nC

Rds On - Drain-Source Resistance

8.3 mOhms

RoHS

Details

Id - Continuous Drain Current

99 A

Package Description

DPAK-3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

AUIRLR3636TRL

Package Shape

RECTANGULAR

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

7.03

Drain Current-Max (ID)

50 A

操作温度

-55°C ~ 175°C (TJ)

包装

卷带

JESD-609代码

e3

ECCN 代码

EAR99

类型

功率MOSFET

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

附加功能

ULTRA-LOW RESISTANCE

子类别

MOSFETs

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

JESD-30代码

R-PSSO-G2

极性

N

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

143

箱体转运

DRAIN

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

6.8mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

3779 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

49 nC @ 4.5 V

漏源电压 (Vdss)

60 V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-252AA

最大漏极电流 (Abs) (ID)

99 A

漏极-源极导通最大电阻

0.0083 Ω

脉冲漏极电流-最大值(IDM)

396 A

DS 击穿电压-最小值

60 V

信道型

N

雪崩能量等级（Eas）

170 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

143 W

场效应管特性

-

产品类别

MOSFET

宽度

6.22 mm

高度

2.3 mm

长度

6.5 mm

达到SVHC

compliant