Infineon Technologies BSC005N03LS5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8 FL

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

42A (Ta), 433A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3W (Ta), 188W (Tc)

Continuous Drain Current Id

433

Number of Elements per Chip

1

Package Type

TDSON

Qualification

-

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

21 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

300 S

Channel Mode

Enhancement

Part # Aliases

BSC005N03LS5 SP004819078

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

59 nC

Rds On - Drain-Source Resistance

630 uOhms

RoHS

Details

Typical Turn-Off Delay Time

48.4 ns

Id - Continuous Drain Current

433 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

188

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.55mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 250μA

输入电容(Ciss)(Max)@Vds

8900 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

122 nC @ 10 V

上升时间

20.7 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET