Infineon Technologies BSC009NE2LSXT

包装/外壳

TDSON-8

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

25 V

Id - Continuous Drain Current

100 A

Rds On - Drain-Source Resistance

1 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1 V

Qg - Gate Charge

168 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

96 W

Channel Mode

Enhancement

Qualification

AEC-Q101

Tradename

OptiMOS

Fall Time

19 ns

Forward Transconductance - Min

85 S

Factory Pack QuantityFactory Pack Quantity

5000

Typical Turn-Off Delay Time

48 ns

Typical Turn-On Delay Time

10 ns

Part # Aliases

SP000893362 BSC009NE2LSATMA1

包装

Reel

配置

Single

通道数量

1 Channel

上升时间

33 ns

晶体管类型

1 N-Channel

高度

1.27 mm

长度

5.9 mm

宽度

5.15 mm