Infineon Technologies BSC011N03LSIXT
- 收藏
- 对比
BSC011N03LSIXT
1211-BSC011N03LSIXT
晶体管 - FET,MOSFET - 单个
TDSON-8
大陆
立即发货

MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
1最小包装量--
BSC011N03LSIXT详情
Infineon Technologies BSC011N03LSIXT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TDSON-8
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
230 A
Rds On - Drain-Source Resistance
1.1 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
68 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
96 W
Channel Mode
Enhancement
Tradename
OptiMOS
Fall Time
6.2 ns
Forward Transconductance - Min
80 S
Factory Pack QuantityFactory Pack Quantity
5000
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
6.4 ns
Part # Aliases
SP000884574 BSC011N03LSIATMA1
包装
MouseReel
配置
Single
通道数量
1 Channel
上升时间
9.2 ns
晶体管类型
1 N-Channel
高度
1.27 mm
长度
5.9 mm
宽度
5.15 mm
BSC011N03LSIXT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。