Infineon Technologies BSC018NE2LSIXT

包装/外壳

TDSON-8

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

25 V

Id - Continuous Drain Current

100 A

Rds On - Drain-Source Resistance

1.5 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Qg - Gate Charge

48 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

69 W

Channel Mode

Enhancement

Tradename

OptiMOS

Fall Time

3.6 ns

Forward Transconductance - Min

65 S

Factory Pack QuantityFactory Pack Quantity

5000

Typical Turn-Off Delay Time

24 ns

Typical Turn-On Delay Time

5.2 ns

Part # Aliases

SP000906030 BSC018NE2LSIATMA1

包装

Reel

配置

Single

通道数量

1 Channel

上升时间

4.8 ns

晶体管类型

1 N-Channel

高度

1.27 mm

长度

5.9 mm

宽度

5.15 mm