Infineon Technologies BSC023N08NS5SCATMA1
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BSC023N08NS5SCATMA1
1211-BSC023N08NS5SCATMA1
晶体管 - FET,MOSFET - 单个
PG-WSON-8
大陆
立即发货

TRENCH 40<-<100V
1最小包装量--
BSC023N08NS5SCATMA1详情
Infineon Technologies BSC023N08NS5SCATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
PG-WSON-8
厂商
Infineon Technologies
Product Status
活跃
Factory Pack QuantityFactory Pack Quantity
4000
Part # Aliases
BSC023N08NS5SC SP005561403
Manufacturer
Infineon
Brand
Infineon Technologies
RoHS
Details
Vds - Drain-Source Breakdown Voltage
80 V
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
3 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
78 nC
Rds On - Drain-Source Resistance
2.3 mOhms
Id - Continuous Drain Current
202 A
系列
-
包装
Reel
子类别
MOSFETs
通道数量
1 Channel
产品类别
MOSFET
产品类别
MOSFET
BSC023N08NS5SCATMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。