Infineon Technologies BSC030N04NSGXT
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BSC030N04NSGXT
1211-BSC030N04NSGXT
晶体管 - FET,MOSFET - 单个
TDSON-8
大陆
立即发货

MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
1最小包装量--
BSC030N04NSGXT详情
Infineon Technologies BSC030N04NSGXT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TDSON-8
引脚数
8
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
100 A
Rds On - Drain-Source Resistance
2.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
61 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
83 W
Channel Mode
Enhancement
Fall Time
5 ns
Forward Transconductance - Min
46 S
Factory Pack QuantityFactory Pack Quantity
5000
Typical Turn-Off Delay Time
23 ns
Typical Turn-On Delay Time
16 ns
Part # Aliases
BSC030N04NS SP000354811 G BSC030N04NSGATMA1
RoHS
Non-Compliant
包装
Reel
配置
Single
通道数量
1 Channel
上升时间
4 ns
晶体管类型
1 N-Channel
高度
1.27 mm
长度
5.9 mm
宽度
5.15 mm
BSC030N04NSGXT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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