Infineon Technologies BSC040N10NS5SCATMA1

安装类型

表面贴装

包装/外壳

8-PowerWDFN

引脚数

8

供应商器件包装

PG-WSON-8-2

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 95μA

Power Dissipation (Max)

3W (Ta), 167W (Tc)

Base Product Number

BSC040

Continuous Drain Current Id

140

Package Type

SuperSO8 5 x 6 DSC

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

139 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

60 S

Channel Mode

Enhancement

Part # Aliases

BSC040N10NS5SC SP005348851

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

72 nC

Rds On - Drain-Source Resistance

4 mOhms

Typical Turn-Off Delay Time

32 ns

Id - Continuous Drain Current

136 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

167

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

5300 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

72 nC @ 10 V

上升时间

9 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET