Infineon Technologies BSC0703LSATMA1

包装/外壳

8-PowerTDFN

安装类型

表面贴装

供应商器件包装

PG-TDSON-8-6

Base Product Number

BSC0703

Power Dissipation (Max)

2.5W (Ta), 46W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

15A (Ta), 64A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

64A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

46 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

32 S

Channel Mode

Enhancement

Part # Aliases

BSC0703LS SP001614022

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

6.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

64 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

46W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.5mOhm @ 32A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 20μA

输入电容(Ciss)(Max)@Vds

1800 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

13 nC @ 4.5 V

上升时间

3 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET