Infineon Technologies BSC070N10NS5SCATMA1

包装/外壳

8-PowerWDFN

安装类型

表面贴装

供应商器件包装

PG-WSON-8-2

Base Product Number

BSC070

Power Dissipation (Max)

3W (Ta), 100W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 50μA

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25℃

14A (Ta), 82A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Continuous Drain Current Id

82

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

83 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

38 ns

Channel Mode

Enhancement

Part # Aliases

BSC070N10NS5SC SP005348852

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

38 nC

Rds On - Drain-Source Resistance

7 mOhms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

100

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7mOhm @ 40A, 10V

输入电容(Ciss)(Max)@Vds

2700 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

38 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET