Infineon Technologies BSO612CVGXUMA1
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BSO612CVGXUMA1
1211-BSO612CVGXUMA1
晶体管 - FET,MOSFET - 单个
DSO-8
大陆
立即发货

MOSFET TRENCH 40<-<100V
1最小包装量--
BSO612CVGXUMA1详情
Infineon Technologies BSO612CVGXUMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
26 Weeks
包装/外壳
DSO-8
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
3 A, 2 A
Rds On - Drain-Source Resistance
90 mOhms, 220 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
10.3 nC, 10.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2 W
Channel Mode
Enhancement
Fall Time
35 ns, 60 ns
Forward Transconductance - Min
1.2 S, 2 S
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
2500
Typical Turn-Off Delay Time
25 ns, 145 ns
Typical Turn-On Delay Time
12 ns, 15 ns
Part # Aliases
BSO612CV G SP005353855
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
厂商
Infineon Technologies
Product Status
活跃
Package Description
,
Moisture Sensitivity Levels
3
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
BSO612CVGXUMA1
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
5.75
包装
Reel
系列
*
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
通道数量
2 Channel
上升时间
30 ns, 95 ns
晶体管类型
1 P-Channel, 1 N-Channel
BSO612CVGXUMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







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