Infineon Technologies BSP135IXTSA1

安装类型

表面贴装

包装/外壳

TO-261-4, TO-261AA

供应商器件包装

PG-SOT223-4

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

120mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Power Dissipation (Max)

1.8W (Ta)

Continuous Drain Current Id

120

Number of Elements per Chip

1

Package Type

SOT-223

Channel Mode

Depletion

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

1.8 W

Id - Continuous Drain Current

120 mA

RoHS

Details

Rds On - Drain-Source Resistance

30 Ohms

Qg - Gate Charge

3.7 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

BSP135I SP005558623

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

1000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

4

通道数量

1 Channel

功率耗散

1.8

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

45Ohm @ 120mA, 10V

不同 Id 时 Vgs(th)（最大值）

1V @ 94μA

输入电容(Ciss)(Max)@Vds

98 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

3.7 nC @ 5 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET