Infineon Technologies BSZ0702LSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8 FL

厂商

Infineon Technologies

Product Status

不用于新设计

Current - Continuous Drain (Id) @ 25℃

17A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.1W (Ta), 69W (Tc)

Base Product Number

BSZ0702

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

40A

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

1.7 V

Pd - Power Dissipation

69 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

18 nC

Rds On - Drain-Source Resistance

4.4 mOhms

Id - Continuous Drain Current

40 A

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

功率耗散

69W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 36μA

输入电容(Ciss)(Max)@Vds

3100 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

22 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-