Infineon Technologies BSZ086P03NS3GXT

工厂交货时间

26 Weeks

包装/外壳

TSDSON-8

表面安装

YES

终端数量

5

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

P-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

6.5 mOhms

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

3.1 V

Qg - Gate Charge

57.5 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

69 W

Channel Mode

Enhancement

Fall Time

8 ns

Forward Transconductance - Min

30 S

Factory Pack QuantityFactory Pack Quantity

5000

Typical Turn-Off Delay Time

35 ns

Typical Turn-On Delay Time

16 ns

Part # Aliases

G BSZ086P03NS3 SP000473024 BSZ086P03NS3GATMA1

Unit Weight

0.001367 oz

Continuous Drain Current Id

13.5

Package Description

SMALL OUTLINE, S-PDSO-N5

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

150 °C

Manufacturer Part Number

BSZ086P03NS3GXT

Package Shape

SQUARE

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

1.61

Drain Current-Max (ID)

13.5 A

包装

MouseReel

端子位置

DUAL

终端形式

无铅

JESD-30代码

S-PDSO-N5

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

46 ns

极性/通道类型

P-CHANNEL

晶体管类型

1 P-Channel

漏极-源极导通最大电阻

0.0134 Ω

脉冲漏极电流-最大值(IDM)

160 A

DS 击穿电压-最小值

30 V

信道型

P

雪崩能量等级（Eas）

105 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

高度

1.1 mm

长度

3.3 mm

宽度

3.3 mm

达到SVHC

compliant