Infineon Technologies BSZ0911LSATMA1

包装/外壳

TSDSON-8

安装类型

表面贴装

供应商器件包装

PG-TDSON-8 FL

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

7.2 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

10 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

-

Channel Mode

Enhancement

Fall Time

2.4 ns

Forward Transconductance - Min

34 S

Factory Pack QuantityFactory Pack Quantity

5000

Typical Turn-Off Delay Time

12 ns

Typical Turn-On Delay Time

2.5 ns

Part # Aliases

BSZ0911LS SP005424280

Unit Weight

0.001367 oz

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

BSZ0911

Current - Continuous Drain (Id) @ 25℃

12A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

-

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250µA

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

40A

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

OptiMOS™ 5

通道数量

1 Channel

功率耗散

-

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

670 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

10 nC @ 10 V

上升时间

3.4 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-