Infineon Technologies CY7C2670KV18-450BZI
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CY7C2670KV18-450BZI
1211-CY7C2670KV18-450BZI
存储器
FBGA-165
大陆
立即发货

SRAM 144Mb 1.8V 450Mhz 4M x 36 DDR II SRAM
1最小包装量--
CY7C2670KV18-450BZI详情
Infineon Technologies CY7C2670KV18-450BZI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
FBGA-165
安装类型
表面贴装
引脚数
165
供应商器件包装
165-FBGA (15x17)
Factory Pack QuantityFactory Pack Quantity
105
Moisture Sensitive
有
Memory Types
DDR
Mounting Styles
SMD/SMT
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Supply Voltage-Min
1.7 V
Interface Type
Parallel
Maximum Clock Frequency
450 MHz
RoHS
N
Maximum Clock Rate
450 MHz
Supplier Package
FBGA
Data Rate Architecture
DDR
Typical Operating Supply Voltage
1.8000 V
Minimum Operating Supply Voltage
1.7 V
Timing Type
Synchronous
Number of Words
4 MWords
Number of I/O Lines
36 Bit
Maximum Operating Supply Voltage
1.9 V
Mounting
表面贴装
Package
Tray
Base Product Number
CY7C2670
厂商
Infineon Technologies
Product Status
活跃
Supply Voltage-Max
1.9 V
Usage Level
Industrial grade
系列
CY7C2670KV18
包装
Tray
操作温度
-40 to 85 °C
类型
Synchronous
技术
SRAM - Synchronous, DDR II+
电压 - 供电
1.7V ~ 1.9V
内存大小
144 Mbit
端口的数量
1
时钟频率
450 MHz
电源电流-最大值
980 mA
访问时间
50 ns
内存格式
SRAM
内存接口
Parallel
建筑学
Pipelined
组织结构
4 M x 36
写入周期时间 - 字符、页面
-
地址总线宽度
21 Bit
密度
144 Mbit
记忆密度
144
筛选水平
Industrial
组织的记忆
4M x 36
CY7C2670KV18-450BZI拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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