注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥83.223203
10
¥78.512456
100
¥74.068355
500
¥69.875806
1000
¥65.920572
Infineon Technologies IGLD60R070D1AUMA3
- 收藏
- 对比
IGLD60R070D1AUMA3
1211-IGLD60R070D1AUMA3
晶体管 - FET,MOSFET - 单个
8-LDFN Exposed Pad
大陆
立即发货

GANFET N-CH
--最小包装量--
¥
总价: ¥
IGLD60R070D1AUMA3详情
Infineon Technologies IGLD60R070D1AUMA3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-LDFN Exposed Pad
供应商器件包装
PG-LSON-8-1
厂商
Infineon Technologies
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Power Dissipation (Max)
114W (Tc)
Qualification
-
Continuous Drain Current Id
15A
Moisture Sensitive
有
Factory Pack QuantityFactory Pack Quantity
3000
Manufacturer
Infineon
Brand
Infineon Technologies
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
900 mV
Pd - Power Dissipation
114 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Id - Continuous Drain Current
15 A
操作温度
-55°C ~ 150°C (TJ)
包装
Reel
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
-
不同 Id 时 Vgs(th)(最大值)
1.6V @ 2.6mA
输入电容(Ciss)(Max)@Vds
380 pF @ 400 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
-10V
场效应管特性
-
产品类别
Infineon
IGLD60R070D1AUMA3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies






哦! 它是空的。